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| Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB767 Unit: mm s Features q q q 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) 2.60.1 0.4max. 45 0.40.08 0.50.08 1.50.1 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 3.00.15 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 80 80 5 1 0.5 1 150 -55 ~ +150 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package marking Marking symbol : X Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 100A, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = -50mA*2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 Unit A V V V 80 80 5 130 50 100 0.2 0.85 120 11 *2 330 0.4 1.2 MHz pF Pulse measurement FE1 Rank classification Rank hFE1 R 130 ~ 220 XR S 185 ~ 330 XS Marking Symbol 2.50.1 +0.25 V V 1 Transistor PC -- Ta 1.4 2SD875 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 1.2 Ta=25C 1.0 IB=10mA 9mA 8mA 7mA 6mA 5mA 0.6 4mA 3mA 0.4 2mA 0.2 1mA 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25C -25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 Collector current IC (A) 0 20 40 60 80 100 120 140 160 0.8 0.8 0.6 0.4 0.2 0 0 0 2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 300 VCE=10V 200 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 250 Ta=75C 200 25C -25C Transition frequency fT (MHz) 300 1000 30 10 3 25C 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=-25C 75C Forward current transfer ratio hFE 160 120 150 80 100 50 40 0 1 3 10 30 100 0 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 50 10 IE=0 f=1MHz Ta=25C 3 Area of safe operation (ASO) Single pulse TC=25C ICP Collector output capacitance Cob (pF) Collector current IC (A) 40 1 0.3 IC t=1s DC 30 0.1 0.03 0.01 0.003 20 10 0 1 3 10 30 100 0.001 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 |
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